STGB10NC60KT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

65W

Current - Collector Pulsed (Icm) :

30A

Series :

PowerMESH™

Additional Feature :

ULTRA FAST

Td (on/off) @ 25°C :

17ns/72ns

Rise Time :

6ns

Number of Terminations :

2

JESD-609 Code :

e3

Continuous Drain Current (ID) :

10A

Test Condition :

390V, 5A, 10 Ω, 15V

Pin Count :

3

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

STGB10

Peak Reflow Temperature (Cel) :

245

Packaging :

Tape and Reel (TR)

Max Collector Current :

20A

Turn-Off Delay Time :

72 ns

Drain to Source Voltage (Vdss) :

600V

Terminal Form :

Gull wing

Power Dissipation :

60W

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Power - Max :

65W

Switching Energy :

55μJ (on), 85μJ (off)

Lead Free :

Lead Free

Turn On Time :

23 ns

Number of Pins :

3

Radiation Hardening :

No

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voltage - Rated DC :

600V

Mounting Type :

Surface Mount

Transistor Application :

POWER CONTROL

Gate-Emitter Voltage-Max :

20V

Number of Elements :

1

Turn Off Time-Nom (toff) :

242 ns

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

600V

ECCN Code :

EAR99

Input Type :

Standard

Turn On Delay Time :

17 ns

Collector Emitter Voltage (VCEO) :

600V

Gate Charge :

19nC

Current Rating :

10A

Gate-Emitter Thr Voltage-Max :

6.5V

Pbfree Code :

yes

Max Breakdown Voltage :

600V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2