STGB10NB37LZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

440V

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Max Collector Current :

20A

Current - Collector Pulsed (Icm) :

40A

Transistor Element Material :

SILICON

Base Part Number :

STGB10

Number of Terminations :

2

Mounting Type :

Surface Mount

Gate-Emitter Thr Voltage-Max :

2.4V

Test Condition :

328V, 10A, 1k Ω, 5V

Operating Temperature :

-65°C~175°C TJ

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

1.8V @ 4.5V, 10A

Radiation Hardening :

No

Rise Time :

340ns

Gate Charge :

28nC

Additional Feature :

VOLTAGE CLAMPING

Packaging :

Tape and Reel (TR)

Height :

4.6mm

Turn Off Time-Nom (toff) :

17800 ns

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

245

Width :

9.35mm

Max Breakdown Voltage :

440V

Terminal Finish :

Matte Tin (Sn) - annealed

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Pbfree Code :

yes

Switching Energy :

2.4mJ (on), 5mJ (off)

Power Dissipation :

125W

RoHS Status :

ROHS3 Compliant

Length :

10.4mm

Collector Emitter Breakdown Voltage :

440V

Element Configuration :

Single

Series :

PowerMESH™

Mount :

Surface Mount

Transistor Application :

AUTOMOTIVE IGNITION

Current Rating :

20A

Factory Lead Time :

8 Weeks

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

1.3μs/8μs

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Turn On Time :

860 ns

JESD-30 Code :

R-PSSO-G2

Max Power Dissipation :

125W