STGB10NB40LZT4
- Mfr.Part #
- STGB10NB40LZT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 440V 20A 150W D2PAK
- Stock
- 12,263
- In Stock :
- 12,263
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Max Collector Current :
- 20A
- Max Power Dissipation :
- 150W
- Number of Elements :
- 1
- Test Condition :
- 328V, 10A, 1k Ω, 5V
- Turn On Time :
- 1570 ns
- Switching Energy :
- 2.4mJ (on), 5mJ (off)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Vce(on) (Max) @ Vge, Ic :
- 1.8V @ 4.5V, 10A
- Packaging :
- Tape and Reel (TR)
- Gate Charge :
- 28nC
- Continuous Collector Current :
- 20A
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Length :
- 10.4mm
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 440V
- Height :
- 4.6mm
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Series :
- Automotive, AEC-Q101, PowerMESH™
- Td (on/off) @ 25°C :
- 1.3μs/8μs
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Collector Pulsed (Icm) :
- 40A
- Voltage - Rated DC :
- 18V
- Turn Off Time-Nom (toff) :
- 12000 ns
- Width :
- 9.35mm
- Power Dissipation :
- 150W
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 440V
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1.2V
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- Number of Pins :
- 3
- Weight :
- 2.240009g
- Pin Count :
- 3
- Transistor Application :
- AUTOMOTIVE IGNITION
- Base Part Number :
- STGB10
- Peak Reflow Temperature (Cel) :
- 245
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Rise Time :
- 270ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 20A
- ECCN Code :
- EAR99
- Gate-Emitter Thr Voltage-Max :
- 2.2V
- Element Configuration :
- Single
- Datasheets
- STGB10NB40LZT4

STGB10NB40LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGB10NB40LZT4 Description
STMicroelectronics has created an innovative family of IGBTs, PowerMESHTM, with an all-around exceptional performance using the most recent high voltage technology based on a proprietary strip arrangement. While the gate-emitter Zener provides the ESD protection, the built-in collector-gate Zener demonstrates extremely precise active clamping.
STGB10NB40LZT4 Features
-
AEC-Q101 accredited
-
Reduced threshold voltage
-
Minimal on-voltage drop
-
Low entrance fee
-
Ability to handle high current
-
Features of high voltage clamping
STGB10NB40LZT4 Applications
Switching applications
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