STGB4M65DF2
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- Mfr.Part #
- STGB4M65DF2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRENCH GATE FIELD-STOP IGBT, M S
- Stock
- 16,088
- In Stock ：
- 16,088
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Gate Charge :
- 15.2nC
- Td (on/off) @ 25°C :
- 12ns/86ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Pulsed (Icm) :
- 16A
- Power - Max :
- 68W
- Voltage - Collector Emitter Breakdown (Max) :
- 650V
- Base Part Number :
- STGB4
- Factory Lead Time :
- 30 Weeks
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Type :
- Standard
- Switching Energy :
- 40μJ (on), 136μJ (off)
- Reverse Recovery Time :
- 133ns
- Operating Temperature :
- -55°C~175°C TJ
- IGBT Type :
- Trench Field Stop
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Series :
- M
- Current - Collector (Ic) (Max) :
- 8A
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 4A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Test Condition :
- 400V, 4A, 47 Ω, 15V
- Datasheets
- STGB4M65DF2
STGB4M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGB4M65DF2 Description
The STGB4M65DF2 is a Trench gate field-stop IGBT, M series 650 V, 4 A low loss. This item is an IGBT that was created employing an innovative, exclusive trench gate field-stop structure. The component is an IGBT from the M series, which offers the best performance and efficiency for inverter systems where low-loss and short-circuit functionality are critical. Additionally, safer paralleling operation is produced by the tight parameter distribution and positive VCE(sat) temperature coefficient.
STGB4M65DF2 Features
-
Safer paralleling
-
Low thermal resistance
-
Soft and very fast recovery antiparallel diode
-
6 μs of short-circuit withstand time
-
VCE(sat) = 1.6 V (typ.) @ IC = 4 A
-
Tight parameter distribution
STGB4M65DF2 Applications
-
Motor control
-
UPS
-
PFC
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