STGB3NB60SDT4
- Mfr.Part #
- STGB3NB60SDT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 6A 70W D2PAK
- Stock
- 50,167
- In Stock :
- 50,167
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Td (on/off) @ 25°C :
- 125ns/3.4μs
- Reach Compliance Code :
- not_compliant
- Rise Time :
- 150ns
- Current - Collector Pulsed (Icm) :
- 25A
- Reverse Recovery Time :
- 1.7μs
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- Motor Control
- Gate-Emitter Thr Voltage-Max :
- 5V
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1.5V
- Gate-Emitter Voltage-Max :
- 20V
- Vce(on) (Max) @ Vge, Ic :
- 1.5V @ 15V, 3A
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- Switching Energy :
- 1.15mJ (off)
- Max Power Dissipation :
- 70W
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 175°C TJ
- Number of Elements :
- 1
- Turn On Time :
- 275 ns
- Series :
- PowerMESH™
- Continuous Drain Current (ID) :
- 3A
- Peak Reflow Temperature (Cel) :
- 245
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 600V
- Current Rating :
- 3A
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- Voltage - Rated DC :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 70W
- Input Type :
- Standard
- Gate Charge :
- 18nC
- Drain to Source Voltage (Vdss) :
- 600V
- Collector Emitter Voltage (VCEO) :
- 600V
- REACH SVHC :
- No SVHC
- Turn Off Time-Nom (toff) :
- 4800 ns
- Max Collector Current :
- 6A
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Test Condition :
- 480V, 3A, 1k Ω, 15V
- Base Part Number :
- STGB3
- Datasheets
- STGB3NB60SDT4

STGB3NB60SDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGB3NB60SDT4 Description
STMicroelectronics has created an innovative family of IGBTs, the PowerMESHTM IGBTs, with exceptional performance using the most recent high voltage technology based on a proprietary strip layout. A family with the suffix "S" is one that has been optimized to obtain the least amount of on-voltage drop for low-frequency (1kHz) applications.
STGB3NB60SDT4 Features
-
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
-
VERY LOW ON-VOLTAGE DROP (Vcesat)
-
HIGH CURRENT CAPABILITY
-
OFF LOSSES INCLUDE TAIL CURRENT
-
INTEGRATED FREEWHEELING DIODE
-
SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”)
STGB3NB60SDT4 Applications
-
GAS DISCHARGE LAMP
-
STATIC RELAYS
-
MOTOR CONTROL
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