STGB3NB60FDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Transistor Application :

Motor Control

Terminal Form :

Gull wing

Max Breakdown Voltage :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

PowerMESH™

Rise Time :

60ns

Input Type :

Standard

RoHS Status :

Non-RoHS Compliant

Base Part Number :

STGB3

Collector Emitter Voltage (VCEO) :

2.4V

Reverse Recovery Time :

45ns

Test Condition :

480V, 3A, 10 Ω, 15V

Pin Count :

3

Collector Emitter Breakdown Voltage :

600V

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Transistor Element Material :

SILICON

Max Collector Current :

6A

Power Dissipation :

68W

Gate Charge :

16nC

Packaging :

Tape and Reel (TR)

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 3A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Mounting Type :

Surface Mount

JESD-609 Code :

e0

Voltage - Rated DC :

600V

Element Configuration :

Single

Gate-Emitter Thr Voltage-Max :

5V

JESD-30 Code :

R-PSSO-G2

Turn On Time :

16.5 ns

Current Rating :

3A

Switching Energy :

125μJ (off)

Td (on/off) @ 25°C :

12.5ns/105ns

Terminal Finish :

TIN LEAD

Current - Collector Pulsed (Icm) :

24A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Nom (toff) :

535 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

68W

Mount :

Surface Mount

Qualification Status :

Not Qualified

Collector Emitter Saturation Voltage :

2.4V

Operating Temperature :

150°C TJ

Gate-Emitter Voltage-Max :

20V