STGB30NC60WT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Mount :

Surface Mount

Gate-Emitter Thr Voltage-Max :

5.75V

Gate Charge :

102nC

Input Type :

Standard

Series :

PowerMESH™

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Turn Off Time-Nom (toff) :

189 ns

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Base Part Number :

STGB30

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

245

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

600V

Test Condition :

390V, 20A, 10 Ω, 15V

Pbfree Code :

yes

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

60A

Number of Elements :

1

Switching Energy :

305μJ (on), 181μJ (off)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn) - annealed

Max Breakdown Voltage :

600V

Transistor Application :

Motor Control

Max Power Dissipation :

200W

Terminal Form :

Gull wing

Current - Collector Pulsed (Icm) :

150A

Td (on/off) @ 25°C :

29.5ns/118ns

Power - Max :

200W

Turn On Time :

42.5 ns

Collector Emitter Voltage (VCEO) :

600V

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3