STD7NM80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

ECCN Code :

EAR99

Number of Terminations :

2

JESD-609 Code :

e3

Turn On Delay Time :

20 ns

Peak Reflow Temperature (Cel) :

260

Resistance :

1.05Ohm

Series :

MDmesh™

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Base Part Number :

STD7

Transistor Application :

SWITCHING

Width :

6.2mm

Power Dissipation-Max :

90W Tc

Termination :

SMD/SMT

Transistor Element Material :

SILICON

Mount :

Surface Mount

Height :

2.4mm

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

240 mJ

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 3.25A, 10V

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

35 ns

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Element Configuration :

Single

Threshold Voltage :

4V

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

8ns

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Length :

6.6mm

Drain to Source Breakdown Voltage :

800V

Nominal Vgs :

4 V

Power Dissipation :

90W

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

6.5A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Dual Supply Voltage :

800V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

26A

Pin Count :

3

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated