STD78N75F4
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- Mfr.Part #
- STD78N75F4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 78A DPAK
- Stock
- 27,804
- In Stock ：
- 27,804
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 25 ns
- DS Breakdown Voltage-Min :
- 75V
- Gate Charge (Qg) (Max) @ Vgs :
- 76nC @ 10V
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 78A Tc
- Pin Count :
- 3
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 280A
- Number of Pins :
- 3
- Base Part Number :
- STD78N
- Avalanche Energy Rating (Eas) :
- 185 mJ
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 14 ns
- Drain to Source Voltage (Vdss) :
- 75V
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 70A
- Rise Time :
- 33ns
- Turn-Off Delay Time :
- 61 ns
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- DeepGATE™, STripFET™
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 35A, 10V
- Drain-source On Resistance-Max :
- 0.011Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5015pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 125W Tc
- Terminal Position :
- Single
- Datasheets
- STD78N75F4
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N-Channel Tape & Reel (TR) 11m Ω @ 35A, 10V ±20V 5015pF @ 25V 76nC @ 10V 75V TO-252-3, DPak (2 Leads + Tab), SC-63
STD78N75F4 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 185 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5015pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 70A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 61 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 280A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 75V in order to maintain normal operation.Operating this transistor requires a 75V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STD78N75F4 Features
the avalanche energy rating (Eas) is 185 mJ
a continuous drain current (ID) of 70A
the turn-off delay time is 61 ns
based on its rated peak drain current 280A.
a 75V drain to source voltage (Vdss)
STD78N75F4 Applications
There are a lot of STMicroelectronics
STD78N75F4 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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