STD70NS04ZL
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- Mfr.Part #
- STD70NS04ZL
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 33V 70A DPAK
- Stock
- 27,755
- In Stock ：
- 27,755
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 5V
- Rise Time :
- 70ns
- Avalanche Energy Rating (Eas) :
- 650 mJ
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- SAFeFET™
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 110W Tc
- Power Dissipation :
- 110W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Breakdown Voltage :
- 33V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 30A, 10V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Resistance :
- 10.5mOhm
- Continuous Drain Current (ID) :
- 70A
- Fall Time (Typ) :
- 95 ns
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 280A
- Base Part Number :
- STD70N
- Datasheets
- STD70NS04ZL
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N-Channel Tape & Reel (TR) 10.5m Ω @ 30A, 10V ±20V 1800pF @ 25V 32nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD70NS04ZL Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 650 mJ.A device's maximum input capacitance is 1800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 70A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=33V, and this device has a drain-to-source breakdown voltage of 33V voltage.Its maximum pulsed drain current is 280A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
STD70NS04ZL Features
the avalanche energy rating (Eas) is 650 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 33V voltage
based on its rated peak drain current 280A.
STD70NS04ZL Applications
There are a lot of STMicroelectronics
STD70NS04ZL applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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