STD7ANM60N

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Mfr.Part #
STD7ANM60N
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 5A DPAK
Stock
1,520
In Stock :
1,520

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
150°C TJ
Height :
4.6mm
Rds On (Max) @ Id, Vgs :
900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn On Delay Time :
7 ns
Mounting Type :
Surface Mount
Factory Lead Time :
16 Weeks
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Input Capacitance (Ciss) (Max) @ Vds :
363pF @ 50V
Lead Free :
Lead Free
FET Type :
N-Channel
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Width :
9.35mm
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
25V
Mount :
Surface Mount
Base Part Number :
STD7
Number of Channels :
1
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
26 ns
Continuous Drain Current (ID) :
5A
Power Dissipation-Max :
45W Tc
Vgs (Max) :
±25V
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Length :
10.4mm
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN Code :
EAR99
Rise Time :
10ns
Series :
Automotive, AEC-Q101, MDmesh™ II
Fall Time (Typ) :
12 ns
Datasheets
STD7ANM60N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD7ANM60N from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Base Part Number:STD7, Number of Channels:1, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, STD7ANM60N pinout, STD7ANM60N datasheet PDF, STD7ANM60N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD7ANM60N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD7ANM60N


N-Channel Tape & Reel (TR) 900m Ω @ 2.5A, 10V ±25V 363pF @ 50V 14nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD7ANM60N Description


These N-channel Power MOSFETs were created using MDmeshTM technology's second generation. These ground-breaking Power MOSFETs combine a vertical structure with the company's strip layout to produce one of the lowest on-resistance and gate charge in the world. As a result, they are well-suited to the most demanding high-efficiency converters.



STD7ANM60N Features


  • AEC-Q101 qualified

  • 100% avalanche tested

  • Low input capacitance and gate charge

  • Low gate input resistance



STD7ANM60N Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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