STD70N03L-1
- Mfr.Part #
- STD70N03L-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 70A IPAK
- Stock
- 27,320
- In Stock :
- 27,320
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 7.3m Ω @ 35A, 10V
- ECCN Code :
- EAR99
- Rise Time :
- 95ns
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSIP-T3
- Turn-Off Delay Time :
- 19 ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Drain to Source Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 5.9mOhm
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Base Part Number :
- STD70N
- Series :
- STripFET™ III
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 15 ns
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 70A
- Power Dissipation :
- 70W
- Additional Feature :
- LOW THRESHOLD
- Element Configuration :
- Single
- Power Dissipation-Max :
- 70W Tc
- Packaging :
- Tube
- Terminal Finish :
- Tin
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- JESD-609 Code :
- e3
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 280A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 5V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Datasheets
- STD70N03L-1

N-Channel Tube 7.3m Ω @ 35A, 10V ±20V 2200pF @ 25V 21nC @ 5V TO-251-3 Short Leads, IPak, TO-251AA
STD70N03L-1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 2200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 70A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 280A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
STD70N03L-1 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 280A.
STD70N03L-1 Applications
There are a lot of STMicroelectronics
STD70N03L-1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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