STD70N6F3
- Mfr.Part #
- STD70N6F3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 70A DPAK
- Stock
- 11,407
- In Stock :
- 11,407
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Cut Tape (CT)
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Resistance :
- 10.5mOhm
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 110W Tc
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- DRAIN
- Base Part Number :
- STD70N
- Series :
- STripFET™ III
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 70A
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 35A, 10V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 280A
- Power Dissipation :
- 110W
- Datasheets
- STD70N6F3
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N-Channel Cut Tape (CT) 10.5m Ω @ 35A, 10V ±20V 2200pF @ 25V 35nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD70N6F3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2200pF @ 25V.This device has a continuous drain current (ID) of [70A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A maximum pulsed drain current of 280A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STD70N6F3 Features
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 280A.
STD70N6F3 Applications
There are a lot of STMicroelectronics
STD70N6F3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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