STD70N10F4
- Mfr.Part #
- STD70N10F4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A DPAK
- Stock
- 9,612
- In Stock :
- 9,612
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 65 ns
- Resistance :
- 19.5MOhm
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Transistor Application :
- SWITCHING
- Series :
- DeepGATE™, STripFET™
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 100V
- Rds On (Max) @ Id, Vgs :
- 19.5m Ω @ 30A, 10V
- Number of Terminations :
- 2
- Base Part Number :
- STD70N
- Number of Pins :
- 3
- Pin Count :
- 3
- Rise Time :
- 20ns
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 20 ns
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 30 ns
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 125W
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 125W Tc
- Pulsed Drain Current-Max (IDM) :
- 240A
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 60A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Element Configuration :
- Single
- Datasheets
- STD70N10F4
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N-Channel Tape & Reel (TR) 19.5m Ω @ 30A, 10V ±20V 5800pF @ 25V 85nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD70N10F4 Description
The STD70N10F4 Power MOSFET technology has been specially designed to minimize on-state resistance and provide superior switching behavior with a new gate structure.
STD70N10F4 Features
-
Exceptional dv/dt capability
-
100% avalanche tested
-
Extremely low on-resistance RDS(on)
STD70N10F4 Applications
-
General-purpose switching
-
Class B amplifiers
-
Pre-amplifier circuits
-
Push-Pull configuration circuits
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