STD70N02L-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOW THRESHOLD

Drain-source On Resistance-Max :

0.008Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

240A

Continuous Drain Current (ID) :

60A

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 16V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Packaging :

Tube

Series :

STripFET™ III

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Terminations :

3

Number of Elements :

1

Power Dissipation-Max :

60W Tc

Power Dissipation :

60W

Fall Time (Typ) :

16 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Vgs (Max) :

±20V

Pin Count :

3

Drain to Source Voltage (Vdss) :

25V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Mounting Type :

Through Hole

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

27 ns

Base Part Number :

STD70N

Drain to Source Breakdown Voltage :

24V

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Rise Time :

130ns

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

280 mJ