STD70NH02LT4
- Mfr.Part #
- STD70NH02LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 60A DPAK
- Stock
- 540
- In Stock :
- 540
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 24V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 70W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 240A
- ECCN Code :
- EAR99
- Base Part Number :
- STD70N
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 30A, 10V
- Reach Compliance Code :
- not_compliant
- Additional Feature :
- LOW THRESHOLD
- Vgs (Max) :
- ±20V
- Current Rating :
- 60A
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.008Ohm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 1.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Fall Time (Typ) :
- 25 ns
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 360 mJ
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- STripFET™ II
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 24V
- Turn-Off Delay Time :
- 18 ns
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 70W
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-252AA
- Continuous Drain Current (ID) :
- 60A
- Rise Time :
- 200ns
- Datasheets
- STD70NH02LT4
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N-Channel Tape & Reel (TR) 8m Ω @ 30A, 10V ±20V 2050pF @ 25V 22nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD70NH02LT4 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 360 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2050pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.In this device, the drain-source breakdown voltage is 24V and VGS=24V, so the drain-source breakdown voltage is 24V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 240A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
STD70NH02LT4 Features
the avalanche energy rating (Eas) is 360 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 18 ns
based on its rated peak drain current 240A.
STD70NH02LT4 Applications
There are a lot of STMicroelectronics
STD70NH02LT4 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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