STD7N52DK3
- Mfr.Part #
- STD7N52DK3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 525V 6A DPAK
- Stock
- 5,715
- In Stock :
- 5,715
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- SuperFREDmesh3™
- Drain to Source Breakdown Voltage :
- 620V
- JESD-30 Code :
- R-PSSO-G2
- Drain Current-Max (Abs) (ID) :
- 6A
- Gate to Source Voltage (Vgs) :
- 30V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Resistance :
- 1.15Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 50V
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 24A
- Rise Time :
- 22ns
- Width :
- 6.2mm
- Length :
- 6.6mm
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Threshold Voltage :
- 3.75V
- Turn-Off Delay Time :
- 37 ns
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Power Dissipation-Max :
- 90W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 90W
- Turn On Delay Time :
- 12 ns
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 12 Weeks
- Height :
- 2.4mm
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- Drain to Source Voltage (Vdss) :
- 525V
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Fall Time (Typ) :
- 22 ns
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 6A
- Base Part Number :
- STD7
- Rds On (Max) @ Id, Vgs :
- 1.15 Ω @ 3A, 10V
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Datasheets
- STD7N52DK3
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N-Channel Tape & Reel (TR) 1.15 Ω @ 3A, 10V ±30V 870pF @ 50V 33nC @ 10V 525V TO-252-3, DPak (2 Leads + Tab), SC-63
STD7N52DK3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 870pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=620V. And this device has 620V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 6A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 37 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 24A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. Operating this transistor requires a 525V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STD7N52DK3 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 24A.
a threshold voltage of 3.75V
a 525V drain to source voltage (Vdss)
STD7N52DK3 Applications
There are a lot of STMicroelectronics
STD7N52DK3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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