STD7NM80-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Series :

MDmesh™

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

90W Tc

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STD7

Number of Terminations :

3

Turn On Delay Time :

20 ns

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - annealed

Drain to Source Breakdown Voltage :

800V

Height :

6.2mm

Turn-Off Delay Time :

35 ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Fall Time (Typ) :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Lead Free :

Lead Free

Width :

2.4mm

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

90W

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

6.5A

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

240 mJ

Length :

6.6mm

Threshold Voltage :

4V

Mount :

Surface Mount, Through Hole

Pulsed Drain Current-Max (IDM) :

26A

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Rise Time :

8ns

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 3.25A, 10V

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated