STD7NM64N
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- Mfr.Part #
- STD7NM64N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 640V 5A DPAK
- Stock
- 2,725
- In Stock ：
- 2,725
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1
- Fall Time (Typ) :
- 12 ns
- Turn On Delay Time :
- 7 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation-Max :
- 60W Tc
- Rise Time :
- 10ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Series :
- MDmesh™ II
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 363pF @ 50V
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 5A
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Base Part Number :
- STD7
- Vgs (Max) :
- ±25V
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Rds On (Max) @ Id, Vgs :
- 1.05 Ω @ 2.5A, 10V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 640V
- Weight :
- 3.949996g
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 26 ns
- Datasheets
- STD7NM64N
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N-Channel Tape & Reel (TR) 1.05 Ω @ 2.5A, 10V ±25V 363pF @ 50V 14nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD7NM64N Overview
A device's maximal input capacitance is 363pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 640V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 26 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
STD7NM64N Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 640V voltage
the turn-off delay time is 26 ns
STD7NM64N Applications
There are a lot of STMicroelectronics
STD7NM64N applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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