STD7NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

10ns

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

5A

Mounting Type :

Surface Mount

Number of Terminations :

2

Length :

6.6mm

Height :

2.4mm

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

363pF @ 50V

Radiation Hardening :

No

Number of Elements :

1

Resistance :

900mOhm

Number of Pins :

3

Threshold Voltage :

3V

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.5A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

5A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Vgs (Max) :

±25V

Series :

MDmesh™ II

Drain to Source Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

20A

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

45W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

119 mJ

Turn On Delay Time :

7 ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Lead Free :

Lead Free

Width :

6.2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Fall Time (Typ) :

12 ns

FET Type :

N-Channel

REACH SVHC :

No SVHC

Base Part Number :

STD7

Operating Temperature :

150°C TJ

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

45W Tc

Turn-Off Delay Time :

26 ns

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Terminal Form :

Gull wing

Pin Count :

3