STD7NM50N-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Packaging :

Tube

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

5A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.78Ohm

Rise Time :

5ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Continuous Drain Current (ID) :

5A

Turn-Off Delay Time :

40 ns

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±25V

Pulsed Drain Current-Max (IDM) :

20A

Series :

MDmesh™ II

Base Part Number :

STD7

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

100 mJ

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Fall Time (Typ) :

9 ns

Rds On (Max) @ Id, Vgs :

780m Ω @ 2.5A, 10V

Element Configuration :

Single

Power Dissipation-Max :

45W Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Power Dissipation :

45W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

500V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1