STD7NK30Z
- Mfr.Part #
- STD7NK30Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 5A DPAK
- Stock
- 42,584
- In Stock :
- 42,584
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 50W
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 20 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 2.5A, 10V
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 11 ns
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 5A
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 50W Tc
- Base Part Number :
- STD7
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Pulsed Drain Current-Max (IDM) :
- 20A
- JEDEC-95 Code :
- TO-252AA
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- SuperMESH™
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 25V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 25ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 10 ns
- Drain to Source Breakdown Voltage :
- 300V
- Drain Current-Max (Abs) (ID) :
- 5A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain-source On Resistance-Max :
- 0.9Ohm
- Pin Count :
- 3
- Datasheets
- STD7NK30Z
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N-Channel Tape & Reel (TR) 900m Ω @ 2.5A, 10V ±30V 380pF @ 25V 13nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD7NK30Z Overview
A device's maximal input capacitance is 380pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 20A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
STD7NK30Z Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 20A.
STD7NK30Z Applications
There are a lot of STMicroelectronics
STD7NK30Z applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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