STD7N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 10V

Resistance :

950mOhm

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Fall Time (Typ) :

15.9 ns

Contact Plating :

Tin

Number of Elements :

1

Turn On Delay Time :

7.6 ns

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Threshold Voltage :

3V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

271pF @ 100V

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Rise Time :

7.2ns

Vgs (Max) :

±25V

Length :

6.6mm

Element Configuration :

Single

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Turn-Off Delay Time :

19.3 ns

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

20A

Drain Current-Max (Abs) (ID) :

5A

Transistor Element Material :

SILICON

Width :

6.2mm

FET Type :

N-Channel

Terminal Form :

Gull wing

Series :

MDmesh™ II Plus

Continuous Drain Current (ID) :

5A

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

60W Tc

Avalanche Energy Rating (Eas) :

99 mJ

Height :

2.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

60W

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

600V

Transistor Application :

SWITCHING

Base Part Number :

STD7

Drive Voltage (Max Rds On,Min Rds On) :

10V