SPP80P06PHXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Packaging :

Tube

Continuous Drain Current (ID) :

80A

Package / Case :

TO-220-3

Max Dual Supply Voltage :

-60V

Vgs(th) (Max) @ Id :

4V @ 5.5mA

Halogen Free :

Halogen Free

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Published :

1999

JESD-609 Code :

e3

Power Dissipation :

340W

Pbfree Code :

yes

Rise Time :

18ns

Rds On (Max) @ Id, Vgs :

23m Ω @ 64A, 10V

Fall Time (Typ) :

30 ns

Turn-Off Delay Time :

56 ns

Power Dissipation-Max :

340W Tc

Input Capacitance (Ciss) (Max) @ Vds :

5033pF @ 25V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Number of Elements :

1

Mount :

Through Hole

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

Turn On Delay Time :

24 ns

Gate Charge (Qg) (Max) @ Vgs :

173nC @ 10V

Pin Count :

3

Series :

SIPMOS®

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

60V