SPP80N06S2-05

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Number of Elements :

1

Lead Free :

Contains Lead

JESD-30 Code :

R-PSFM-T3

Published :

2003

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

810 mJ

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

300W Tc

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 80A, 10V

Qualification Status :

Not Qualified

Voltage - Rated DC :

55V

Terminal Position :

Single

Reach Compliance Code :

Unknown

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

6790pF @ 25V

FET Type :

N-Channel

Continuous Drain Current (ID) :

80A

Pulsed Drain Current-Max (IDM) :

320A

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.0051Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e0

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

80A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

TIN LEAD

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

OptiMOS™

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube