SPP80N03S2L05AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

89.7nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Power Dissipation :

167W

Factory Lead Time :

13 Weeks

Package / Case :

TO-220-3

Power Dissipation-Max :

167W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Published :

2003

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 55A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0075Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3320pF @ 25V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Packaging :

Tube

Terminal Position :

Single

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 110μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3