SPP80N06S2-09

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 50A, 10V

DS Breakdown Voltage-Min :

55V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Pulsed Drain Current-Max (IDM) :

320A

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Surface Mount :

No

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

55V

Power Dissipation-Max :

190W Tc

Packaging :

Tube

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

370 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3140pF @ 25V

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

80A

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 125μA

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.0091Ohm

Number of Terminations :

3

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Terminal Finish :

TIN LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

JESD-609 Code :

e0

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Operating Mode :

ENHANCEMENT MODE