SPP80N06S2-08

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

JESD-609 Code :

e3

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Voltage - Rated DC :

55V

Current Rating :

80A

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

215W Tc

Number of Terminations :

3

Number of Pins :

3

Mounting Type :

Through Hole

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 150μA

Pin Count :

3

Voltage :

55V

Drain-source On Resistance-Max :

0.008Ohm

Rds On (Max) @ Id, Vgs :

8m Ω @ 58A, 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current (ID) :

80A

Lead Free :

Contains Lead

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

450 mJ

Current :

80A

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Terminal Finish :

MATTE TIN

Series :

OptiMOS™

Transistor Element Material :

SILICON

Published :

2003

Mount :

Through Hole