SPP80N06S08AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

80A

Input Capacitance (Ciss) (Max) @ Vds :

3660pF @ 25V

Pbfree Code :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

187nC @ 10V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

700 mJ

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Drain-source On Resistance-Max :

0.008Ohm

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

8m Ω @ 80A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

320A

Number of Elements :

1

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Published :

2005

Power Dissipation-Max :

300W Tc

Series :

SIPMOS®

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Surface Mount :

No

Drain to Source Voltage (Vdss) :

55V