SPP80N04S2-04

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

80A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.0037Ohm

Pulsed Drain Current-Max (IDM) :

320A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Package / Case :

TO-220-3

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 80A, 10V

Lead Free :

Contains Lead

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Voltage - Rated DC :

40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

ECCN Code :

EAR99

Terminal Position :

Single

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

810 mJ

Input Capacitance (Ciss) (Max) @ Vds :

6980pF @ 25V

Published :

2004

Mount :

Through Hole

JESD-609 Code :

e3

Mounting Type :

Through Hole

Current Rating :

80A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

300W Tc

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V