SPP80N04S2-H4

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Voltage - Rated DC :

40V

Current Rating :

80A

Published :

2003

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

4m Ω @ 80A, 10V

Gate Charge (Qg) (Max) @ Vgs :

148nC @ 10V

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

320A

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Pin Count :

3

Terminal Position :

Single

FET Type :

N-Channel

Power Dissipation-Max :

300W Tc

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead

ECCN Code :

EAR99

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

660 mJ

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 25V

Reach Compliance Code :

Unknown

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

80A

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.004ohm

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSFM-T3