SPP80N06S2-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Lead Free :

Contains Lead

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Elements :

1

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 68A, 10V

Packaging :

Tube

Package / Case :

TO-220-3

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

4V @ 180μA

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

4540pF @ 25V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

61 ns

Mounting Type :

Through Hole

Turn On Delay Time :

16 ns

Continuous Drain Current (ID) :

80A

FET Type :

N-Channel

Vgs (Max) :

±20V

Series :

OptiMOS™

Rise Time :

37ns

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Published :

2003

Mount :

Through Hole

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0066Ohm

ECCN Code :

EAR99

Fall Time (Typ) :

36 ns

Power Dissipation-Max :

250W Tc

Current Rating :

80A

Terminal Position :

Single

Voltage - Rated DC :

55V