SPP80N03S2L-06

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

2V @ 80μA

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

JESD-609 Code :

e0

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

61 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

73 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

320A

Voltage - Rated DC :

30V

Power Dissipation-Max :

150W Tc

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Package / Case :

TO-220-3

Published :

2003

FET Type :

N-Channel

Rise Time :

23ns

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 80A, 10V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-30 Code :

R-PSFM-T3

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Current Rating :

80A

Avalanche Energy Rating (Eas) :

240 mJ

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2530pF @ 25V

Drain-source On Resistance-Max :

0.0095Ohm

Series :

OptiMOS™

Packaging :

Tube

Number of Terminations :

3

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

80A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Power Dissipation :

150W

Terminal Finish :

TIN LEAD