SPP80N06S-08

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Type :

N

Continuous Drain Current Id :

80

Power Dissipation (Max) :

300W (Tc)

Manufacturer :

Infineon

Input Capacitance (Ciss) (Max) @ Vds :

3660 pF @ 25 V

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Package / Case :

TO-220-3

Rise Time :

53 ns

Mounting Type :

Through Hole

FET Feature :

-

Brand :

Infineon Technologies

Maximum Operating Temperature :

+ 175 C

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

55 V

RoHS :

Details

Rds On (Max) @ Id, Vgs :

8mOhm @ 80A, 10V

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 240µA

Mounting Style :

Through Hole

Height :

15.65 mm

Series :

SPP80N06S

Technology :

Si

Width :

4.4 mm

FET Type :

N-Channel

Subcategory :

MOSFETs

Product Type :

MOSFET

Length :

10 mm

Drive Voltage (Max Rds On, Min Rds On) :

10V

Supplier Device Package :

PG-TO220-3-1

Channel Mode :

Enhancement

Configuration :

Single

Product Status :

Active

Packaging :

Tube

Package :

Bulk

Operating Temperature :

-55°C ~ 175°C (TJ)

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

187 nC @ 10 V