SPP80N10L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

14m Ω @ 58A, 10V

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2002

Current Rating :

80A

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

60ns

Input Capacitance (Ciss) (Max) @ Vds :

4540pF @ 25V

Mounting Type :

Through Hole

Series :

SIPMOS®

Voltage - Rated DC :

100V

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Lead Free :

Lead Free

Power Dissipation-Max :

250W Tc

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.024Ohm

Vgs(th) (Max) @ Id :

2V @ 2mA

Avalanche Energy Rating (Eas) :

700 mJ

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Terminal Position :

Single

Package / Case :

TO-220-3

Packaging :

Tube

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

82 ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

14 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

80A

Pin Count :

3

Number of Elements :

1

Vgs (Max) :

±20V

Fall Time (Typ) :

20 ns

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON