SPP80N08S2-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

300W Tc

Vgs (Max) :

±20V

ECCN Code :

EAR99

Current Rating :

80A

Input Capacitance (Ciss) (Max) @ Vds :

6130pF @ 25V

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Voltage - Rated DC :

75V

Rds On (Max) @ Id, Vgs :

7.4m Ω @ 66A, 10V

Mounting Type :

Through Hole

Mount :

Through Hole

Power Dissipation :

300W

Pin Count :

3

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

Not Applicable

Package / Case :

TO-220-3

Published :

2003

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Continuous Drain Current (ID) :

80A

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0074Ohm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Terminations :

3