SPP80N06S2L-11

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

Unknown

Rise Time :

19ns

Package / Case :

TO-220-3

Turn-Off Delay Time :

45 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 93μA

Current Rating :

80A

Packaging :

Tube

Series :

OptiMOS™

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas) :

280 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Voltage - Rated DC :

55V

Turn On Delay Time :

8.4 ns

RoHS Status :

Non-RoHS Compliant

Published :

2004

Number of Elements :

1

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2650pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Lead Free :

Contains Lead

ECCN Code :

EAR99

Fall Time (Typ) :

18 ns

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Continuous Drain Current (ID) :

80A

Pin Count :

3

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

158W Tc

Power Dissipation :

158W

Transistor Application :

SWITCHING