SPP80N06S2L-09

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3480pF @ 25V

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

320A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 52A, 10V

Number of Elements :

1

FET Type :

N-Channel

JESD-609 Code :

e3

Power Dissipation-Max :

190W Tc

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Packaging :

Tube

Pin Count :

3

Avalanche Energy Rating (Eas) :

370 mJ

Series :

OptiMOS™

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2V @ 125μA

Current Rating :

80A

Voltage - Rated DC :

55V

ECCN Code :

EAR99

Published :

2003

Drain-source On Resistance-Max :

0.0113Ohm

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Continuous Drain Current (ID) :

80A

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

Unknown