SPP80N06S2L-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

31 ns

Termination :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Voltage :

55V

Turn On Delay Time :

18 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

80A

Turn-Off Delay Time :

28 ns

Dual Supply Voltage :

55V

RoHS Status :

Non-RoHS Compliant

Published :

2003

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Pin Count :

3

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4210pF @ 25V

Current Rating :

80A

Current :

80A

Avalanche Energy Rating (Eas) :

450 mJ

Radiation Hardening :

No

Power Dissipation-Max :

210W Tc

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-220-3

Mount :

Through Hole

Rise Time :

35ns

Number of Terminations :

3

Nominal Vgs :

1.6 V

Power Dissipation :

210W

Rds On (Max) @ Id, Vgs :

7m Ω @ 60A, 10V

Series :

OptiMOS™

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 150μA

Voltage - Rated DC :

55V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Terminal Position :

Single

FET Type :

N-Channel

REACH SVHC :

Unknown

JEDEC-95 Code :

TO-220AB