SPP80N06S209

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

320A

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

55V

Drain-source On Resistance-Max :

0.0091Ohm

Number of Elements :

1

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN LEAD

Published :

2003

Avalanche Energy Rating (Eas) :

370 mJ

Drain Current-Max (Abs) (ID) :

80A

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

3140pF @ 25V

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 125μA

Power Dissipation-Max :

190W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 50A, 10V

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

55V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Vgs (Max) :

±20V

Terminal Position :

Single