SIB488DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

725pF @ 6V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Weight :

95.991485mg

Rds On (Max) @ Id, Vgs :

20m Ω @ 6.3A, 4.5V

Power Dissipation :

2.4W

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate to Source Voltage (Vgs) :

8V

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Resistance :

20mOhm

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Continuous Drain Current (ID) :

9A

Number of Elements :

1

Package / Case :

PowerPAK® SC-75-6L

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 8V

Turn-Off Delay Time :

20 ns

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

35A

Number of Channels :

1

Number of Terminations :

6

Vgs (Max) :

±8V

Factory Lead Time :

15 Weeks

FET Type :

N-Channel

Series :

TrenchFET®

Pin Count :

6

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Rise Time :

10ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

9A

Turn On Delay Time :

10 ns

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Pins :

6

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.4W Ta 13W Tc

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

12V

Peak Reflow Temperature (Cel) :

260