SIB417EDK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

95.991485mg

FET Type :

P-Channel

Power Dissipation-Max :

2.4W Ta 13W Tc

Number of Channels :

1

Transistor Application :

SWITCHING

Mount :

Surface Mount

Continuous Drain Current (ID) :

-9A

Element Configuration :

Single

JESD-30 Code :

S-XDSO-N3

Width :

1.6mm

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

8V

Packaging :

Tape and Reel (TR)

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Series :

TrenchFET®

Number of Pins :

6

Package / Case :

PowerPAK® SC-75-6L

Drain to Source Voltage (Vdss) :

8V

Number of Terminations :

3

Nominal Vgs :

-1 V

Turn On Delay Time :

12 ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

REACH SVHC :

Unknown

Height :

750μm

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.058Ohm

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Rds On (Max) @ Id, Vgs :

58m Ω @ 5.8A, 4.5V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 4V

Drain Current-Max (Abs) (ID) :

5.8A

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

5V

Power Dissipation :

2.4W

Vgs (Max) :

±5V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Pin Count :

6

Turn-Off Delay Time :

30 ns

Fall Time (Typ) :

17 ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Rise Time :

31ns

Pbfree Code :

yes

Threshold Voltage :

-1V

Length :

1.6mm