SIB411DK-T1-E3

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Mfr.Part #
SIB411DK-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® SC-75-6L
Datasheet
Download
Description
MOSFET P-CH 20V 9A PPAK SC75-6
Stock
25,684
In Stock :
25,684

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Rds On Max :
66 mΩ
Number of Elements :
1
Fall Time (Typ) :
10 ns
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 8V
Drain to Source Resistance :
66mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
8V
Series :
TrenchFET®
Max Operating Temperature :
150°C
Mounting Type :
Surface Mount
Number of Pins :
6
Power Dissipation-Max :
2.4W Ta 13W Tc
Package / Case :
PowerPAK® SC-75-6L
Input Capacitance (Ciss) (Max) @ Vds :
470pF @ 10V
Input Capacitance :
470pF
Turn-Off Delay Time :
25 ns
Min Operating Temperature :
-55°C
Drain to Source Voltage (Vdss) :
20V
Rds On (Max) @ Id, Vgs :
66mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Published :
2017
Element Configuration :
Single
Continuous Drain Current (ID) :
4.8A
Vgs (Max) :
±8V
Packaging :
Tape and Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Supplier Device Package :
PowerPAK® SC-75-6L Single
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
2.4W
Rise Time :
10ns
FET Type :
P-Channel
Datasheets
SIB411DK-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIB411DK-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:6, Package / Case:PowerPAK® SC-75-6L, Operating Temperature:-55°C~150°C TJ, SIB411DK-T1-E3 pinout, SIB411DK-T1-E3 datasheet PDF, SIB411DK-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIB411DK-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIB411DK-T1-E3


P-Channel Tape & Reel (TR) 66mOhm @ 3.3A, 4.5V ±8V 470pF @ 10V 15nC @ 8V 20V PowerPAK® SC-75-6L

SIB411DK-T1-E3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 470pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.8A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 25 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 66mOhm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.

SIB411DK-T1-E3 Features


a continuous drain current (ID) of 4.8A
the turn-off delay time is 25 ns
single MOSFETs transistor is 66mOhm
a 20V drain to source voltage (Vdss)


SIB411DK-T1-E3 Applications


There are a lot of Vishay Siliconix
SIB411DK-T1-E3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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