SIB417DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

-9A

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 4V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

9A

Nominal Vgs :

-1 V

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Turn-Off Delay Time :

35 ns

Series :

TrenchFET®

Pin Count :

6

JESD-30 Code :

S-XDSO-N3

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Terminations :

3

Drain to Source Breakdown Voltage :

-8V

Termination :

SMD/SMT

Terminal Position :

Dual

Package / Case :

PowerPAK® SC-75-6L

Dual Supply Voltage :

8V

Power Dissipation-Max :

2.4W Ta 13W Tc

Number of Pins :

6

Vgs (Max) :

±5V

Gate Charge (Qg) (Max) @ Vgs :

12.75nC @ 5V

Fall Time (Typ) :

18 ns

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

15A

Rise Time :

31ns

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.052Ohm

Number of Elements :

1

ECCN Code :

EAR99

Turn On Delay Time :

13 ns

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

52m Ω @ 5.6A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.4W

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

5V

Current - Continuous Drain (Id) @ 25°C :

9A Tc