SIB412DK-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

1.6mm

Max Operating Temperature :

150°C

Height :

750μm

Turn-Off Delay Time :

50 ns

Mount :

Surface Mount

Rise Time :

16ns

Gate Charge (Qg) (Max) @ Vgs :

10.16nC @ 5V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Drain to Source Resistance :

34mOhm

Turn On Delay Time :

6.6 ns

Weight :

95.991485mg

Package / Case :

PowerPAK® SC-75-6L

Gate to Source Voltage (Vgs) :

8V

Mounting Type :

Surface Mount

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

34mOhm @ 6.6A, 4.5V

Supplier Device Package :

PowerPAK® SC-75-6L Single

Continuous Drain Current (ID) :

9A

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

535pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Resistance :

34mOhm

Published :

2017

Length :

1.6mm

Vgs (Max) :

±8V

Number of Channels :

1

Fall Time (Typ) :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Input Capacitance :

535pF

Power Dissipation-Max :

2.4W Ta 13W Tc

Rds On Max :

34 mΩ

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V