SIB404DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Rise Time :

40ns

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

2.5W Ta 13W Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Resistance :

19mOhm

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Number of Pins :

6

Pin Count :

6

Continuous Drain Current (ID) :

9A

Gate to Source Voltage (Vgs) :

5V

Rds On (Max) @ Id, Vgs :

19m Ω @ 3A, 4.5V

Radiation Hardening :

No

Lead Free :

Lead Free

Factory Lead Time :

24 Weeks

FET Type :

N-Channel

Package / Case :

PowerPAK® SC-75-6L

Vgs (Max) :

±5V

JESD-30 Code :

S-PDSO-C3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

9A

Number of Elements :

1

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

35A

Number of Channels :

1

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

12V

Fall Time (Typ) :

20 ns

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

800mV @ 250μA

Terminal Finish :

MATTE TIN

Threshold Voltage :

350mV

Series :

TrenchFET®

Case Connection :

DRAIN

Terminal Position :

Dual

Turn On Delay Time :

5 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

C BEND

Turn-Off Delay Time :

20 ns

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

RoHS Status :

ROHS3 Compliant

Published :

2015

Operating Mode :

ENHANCEMENT MODE