SIB412DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

PowerPAK® SC-75-6L

Min Operating Temperature :

-55°C

Element Configuration :

Single

FET Type :

N-Channel

Max Operating Temperature :

150°C

Fall Time (Typ) :

14 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

34 mΩ

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Input Capacitance :

535pF

Dual Supply Voltage :

20V

Resistance :

34mOhm

Mount :

Surface Mount

Rise Time :

16ns

Height :

750μm

Weight :

95.991485mg

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

-4.5A

Power Dissipation-Max :

2.4W Ta 13W Tc

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

10.16nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

535pF @ 10V

Published :

2016

Length :

1.6mm

Drain to Source Breakdown Voltage :

20V

Rds On (Max) @ Id, Vgs :

34mOhm @ 6.6A, 4.5V

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Supplier Device Package :

PowerPAK® SC-75-6L Single

Termination :

SMD/SMT

Nominal Vgs :

-1.5 V

Number of Pins :

6

Drain to Source Resistance :

34mOhm

Number of Channels :

1

Width :

1.6mm

Series :

TrenchFET®

Power Dissipation :

2.4W

Turn On Delay Time :

6.6 ns

Turn-Off Delay Time :

50 ns

RoHS Status :

ROHS3 Compliant