SIB413DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Published :

2016

Power Dissipation-Max :

2.4W Ta 13W Tc

Dual Supply Voltage :

20V

Rise Time :

46ns

Mounting Type :

Surface Mount

Supplier Device Package :

PowerPAK® SC-75-6L Single

Input Capacitance :

357pF

Termination :

SMD/SMT

Package / Case :

PowerPAK® SC-75-6L

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

7.63nC @ 5V

Drain to Source Resistance :

119mOhm

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Turn On Delay Time :

20.5 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Type :

P-Channel

Mount :

Surface Mount

Number of Channels :

1

Vgs (Max) :

±12V

Continuous Drain Current (ID) :

-9A

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

357pF @ 10V

Length :

1.6mm

Width :

1.6mm

Turn-Off Delay Time :

20 ns

Gate to Source Voltage (Vgs) :

12V

Rds On (Max) @ Id, Vgs :

75mOhm @ 6.5A, 4.5V

Weight :

95.991485mg

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-20V

Number of Pins :

6

Rds On Max :

75 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.4W

Min Operating Temperature :

-55°C

Series :

TrenchFET®

Fall Time (Typ) :

6.5 ns

Resistance :

75mOhm

Height :

750μm

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Nominal Vgs :

-1.5 V