SIB414DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

9A Tc

JESD-30 Code :

S-XDSO-N3

Radiation Hardening :

No

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±5V

Power Dissipation :

2.4W

Drain Current-Max (Abs) (ID) :

9A

Input Capacitance (Ciss) (Max) @ Vds :

732pF @ 4V

Continuous Drain Current (ID) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Power Dissipation-Max :

2.4W Ta 13W Tc

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

50 ns

Series :

TrenchFET®

Package / Case :

PowerPAK® SC-75-6L

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Resistance :

26mOhm

Fall Time (Typ) :

14 ns

FET Type :

N-Channel

Published :

2013

Drain to Source Breakdown Voltage :

8V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

5V

Turn On Delay Time :

7 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1V @ 250μA

Pin Count :

6

Pulsed Drain Current-Max (IDM) :

20A

Rds On (Max) @ Id, Vgs :

26m Ω @ 7.9A, 4.5V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Case Connection :

DRAIN

Rise Time :

13ns

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

14.03nC @ 5V

RoHS Status :

ROHS3 Compliant

Number of Pins :

6