SIB415DK-T1-GE3

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Mfr.Part #
SIB415DK-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SC-75-6L
Datasheet
Download
Description
MOSFET P-CH 30V 9A PPAK SC75-6
Stock
10,051
In Stock :
10,051

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tape and Reel (TR)
Transistor Application :
SWITCHING
Turn-Off Delay Time :
14 ns
Power Dissipation-Max :
2.4W Ta 13W Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Time@Peak Reflow Temperature-Max (s) :
40
Vgs (Max) :
±20V
Mount :
Surface Mount
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
9A Tc
FET Type :
P-Channel
Series :
TrenchFET®
Published :
2016
Drain to Source Breakdown Voltage :
-30V
Drain Current-Max (Abs) (ID) :
9A
Pbfree Code :
yes
Nominal Vgs :
-3 V
Gate Charge (Qg) (Max) @ Vgs :
10.05nC @ 10V
Pin Count :
6
Drain-source On Resistance-Max :
0.087Ohm
Mounting Type :
Surface Mount
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
260
Continuous Drain Current (ID) :
-9A
Rds On (Max) @ Id, Vgs :
87m Ω @ 4.17A, 10V
Termination :
SMD/SMT
Rise Time :
55ns
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Radiation Hardening :
No
ECCN Code :
EAR99
Fall Time (Typ) :
10 ns
Transistor Element Material :
SILICON
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds :
295pF @ 15V
Package / Case :
PowerPAK® SC-75-6L
JESD-30 Code :
S-XDSO-N3
RoHS Status :
ROHS3 Compliant
Power Dissipation :
2.4W
Operating Temperature :
-55°C~150°C TJ
Dual Supply Voltage :
30V
Number of Pins :
6
Datasheets
SIB415DK-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIB415DK-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:PowerPAK® SC-75-6L, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, SIB415DK-T1-GE3 pinout, SIB415DK-T1-GE3 datasheet PDF, SIB415DK-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIB415DK-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIB415DK-T1-GE3


P-Channel Tape & Reel (TR) 87m Ω @ 4.17A, 10V ±20V 295pF @ 15V 10.05nC @ 10V PowerPAK® SC-75-6L

SIB415DK-T1-GE3 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 295pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -9A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.A device can conduct a maximum continuous current of [9A] according to its drain current.It is [14 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SIB415DK-T1-GE3 Features


a continuous drain current (ID) of -9A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 14 ns


SIB415DK-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIB415DK-T1-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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